Method and apparatus for decomposing semiconductor thin film

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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118620, 118728, 156626, 156657, 156345, 219121LM, 427 531, 427 93, B44C 122, C03C 1500, C03C 2506, H01L 21306

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046344977

ABSTRACT:
In the present invention, a semiconductor thin film, i.e., a thin film formed on a semiconductor substrate such as a gate oxide film, is formed and decomposed within a single treating vessel. An apparatus of the present invention for decomposing a semiconductor thin film comprises a treating vessel housing a semiconductor substrate, section for introducing into the treating vessel mediums for forming a desired semiconductor thin film on the semiconductor substrate housed in the treating vessel, section for introducing into the treating vessel a medium for decomposing into liquid the thin film formed on the substrate, and section for recovering the decomposed liquid of the semiconductor thin film.

REFERENCES:
patent: 4426246 (1984-01-01), Kravitz et al.
patent: 4438157 (1984-03-01), Romano-Moran
Schafer et al., "Optically Enhanced Oxidation of Semiconductors," J. Vac. Sci. Technol., vol. 19, No. 3, pp. 494-497, Sep. Oct. 1981.
Ellis et al., "Phenomenological Model for Silicon Oxidation in Dry Oxygen in the Presence of HCL," J. Electrochem Soc., vol. 130, No. 9, pp. 1970-1974, Sep. 1983.
Weston et al., "HF Vapor Phase Etching (HF/VPE): Production Viability For Semiconductor Manufacturing and Reaction Model, " J. Vac. Sci. Technol., vol. 17, No. 1, pp. 466-469, Jan/Feb 1980.
Sankaran et al., "Selective in Situ Vapor Etch and Growth of GaAs," J. Electrochem. Soc. Solid-State Science and Technology, vol. 126, No. 7, pp. 1241-1247, Jul. 1979.
Bondur et al., "Plasma Etching for SiO2 Profile Control," Solid State Technology, pp. 122-128, Apr. 1980.
Shimazaki et al., "Analysis of Ultratrace Impurities in the Silicon Device Manufacturing Process," Proceedings of the 26th Symposium on Semiconductors and Integrated Circuit Technology, p. 92, 1984.

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