Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-07-10
2009-06-02
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S007000, C438S487000
Reexamination Certificate
active
07541230
ABSTRACT:
Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member38C, rotatably disposed above the second stage to support an amorphous semiconductor.
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Ohki Koichi
Sasaki Nobuo
Garcia Joanne A
Greer Burns & Crain Ltd.
Richards N Drew
Sharp Kabushiki Kaisha
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