Method and apparatus for crystal ribbon growth

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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15662071, 15662073, 15692074, 156DIG64, 156DIG88, 156DIG97, C30B 1330

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active

050697420

ABSTRACT:
Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its melting temperature and then for controllably cooling the electrodes, an rf heater using the electrodes for melting the film in a zone, a heat pipe for causing solidification along one surface of the melt zone to form a ribbon, a pulling mechanism for moving the ribbon from the melt zone, a heater for melting bulk replenishing material to replenish the melt, and an auxiliary heating device for heating the ribbon after leaving the zone to prevent dendritic growth by maintaining low axial temperature gradients.

REFERENCES:
patent: 3121619 (1964-02-01), Scholte
patent: 3630684 (1971-12-01), Keller
patent: 3644097 (1972-02-01), Knudsen
patent: 3681033 (1972-08-01), Bleil
patent: 3759671 (1973-09-01), Bleil
patent: 4563976 (1986-01-01), Foell et al.
patent: 4563979 (1986-01-01), Falchenberg et al.
patent: 4578143 (1986-03-01), Arai
patent: 4749438 (1988-07-01), Bleil
patent: 4775443 (1988-10-01), Bleil
patent: 4873063 (1989-10-01), Bleil
Thomas et al., "Rate Limits in Silicon Sheet Growth: The Connections Between Vertical and Horizontal Methods", Journal of CrystalGrowth 82 (1987) pp. 1 to 9.

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