Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-12-11
2007-12-11
Dinh, Paul (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C430S005000
Reexamination Certificate
active
11033415
ABSTRACT:
One embodiment of the present invention provides a system that improves lithography performance by correcting for 3D mask effects. During operation the system receives a mask layout that contains etched regions, called shifters, which can have a phase shift relative to other regions. Next, the system chooses a shifter in the mask layout. The system then corrects for 3D mask effects by, iteratively, (a) selecting a region within the shifter, (b) adjusting the phase shift of the selected region in a simulation model to account for 3D mask effects, and (c) modifying the shape of the shifter based on the difference between a desired pattern and a simulated pattern generated using the simulation model.
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Melvin, III Lawrence S.
Shiely James P.
Yan Qiliang
Dinh Paul
Park Vaughan & Fleming LLP
Rossoshek Helen
Synopsys Inc.
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