Method and apparatus for correcting 3D mask effects

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000, C430S005000

Reexamination Certificate

active

11033415

ABSTRACT:
One embodiment of the present invention provides a system that improves lithography performance by correcting for 3D mask effects. During operation the system receives a mask layout that contains etched regions, called shifters, which can have a phase shift relative to other regions. Next, the system chooses a shifter in the mask layout. The system then corrects for 3D mask effects by, iteratively, (a) selecting a region within the shifter, (b) adjusting the phase shift of the selected region in a simulation model to account for 3D mask effects, and (c) modifying the shape of the shifter based on the difference between a desired pattern and a simulated pattern generated using the simulation model.

REFERENCES:
patent: 6127071 (2000-10-01), Lu
patent: 6303253 (2001-10-01), Lu
patent: 6670082 (2003-12-01), Liu et al.
patent: 6785879 (2004-08-01), Pierrat
patent: 6794096 (2004-09-01), Kroyan
patent: 6830854 (2004-12-01), Liu et al.
patent: 6993741 (2006-01-01), Liebmann et al.
patent: 7005218 (2006-02-01), Zhang
patent: 7194163 (2007-03-01), Stepanov
patent: 2005/0219502 (2005-10-01), Sandstrom et al.

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