Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2008-07-22
2008-07-22
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S086000, C117S201000, C117S202000, C118S715000
Reexamination Certificate
active
10839378
ABSTRACT:
Methods and systems for permitting thickness control of the selective epitaxial growth (SEG) layer in a semiconductor manufacturing process, for example raised source/drain applications in CMOS technologies, are presented. These methods and systems provide the capability to measure the thickness of an SEG film in-situ utilizing optical ellipsometry equipment during or after SEG layer growth, prior to removing the wafer from the SEG growth tool. Optical ellipsometry equipment can be integrated into the SEG platform and control software, thus providing automated process control (APC) capability for SEG thickness. The integration of the ellipsometry equipment may be varied, dependent upon the needs of the fabrication facility, e.g., integration to provide ellipsometer monitoring of a single process tool, or multiple tool monitoring, among other configurations.
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U.S.P.T.O Actions on the Merits as of Oct. 17, 2007, 6 pages.
Actions on the Merits by U.S.P.T.O. as of Feb. 18
Besser Paul R.
En William G.
Paton Eric N.
Advanced Micro Devices , Inc.
Kunemund Robert M
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