Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1990-12-13
1992-06-30
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
2504923, H01J 3700
Patent
active
051265761
ABSTRACT:
Method and apparatus for the control of the rate of emission of electrons added to an ion implantation beam to neutralize charging effects on semiconductor wafers being processed. A net charging current, or equivalent voltage, is sensed continuously, but is sampled only when a selected wafer, or multiple selected wafers, are positioned to receive the entire cross section of the ion beam. The sampled charging current is used to control the addition of charge-neutralizing electrons to the ion beam, thereby eliminating problems that ensue from the use of an averaged charging current that is sensed without regard to the relative beam position or the number of wafers being processed.
REFERENCES:
patent: 4639301 (1987-01-01), Doherty et al.
patent: 4675530 (1987-01-01), Rose et al.
patent: 4874947 (1989-10-01), Ward et al.
patent: 5072125 (1991-12-01), Nakanishi et al.
Bright Nicholas J.
Marin Jose-Antonio
Wauk, II Michael T.
Woods Bernard
Applied Materials Inc.
Berman Jack I.
Beyer James E.
Heal Noel F.
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