Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-04-11
2006-04-11
Nguyen, Van Thu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S189070, C365S189090, C365S236000
Reexamination Certificate
active
07027343
ABSTRACT:
A method and apparatus are provided for controlling refresh operations of a dynamic memory device. The temperature of the dynamic memory device is detected. The detected temperature is then used to adjust a refresh rate of the dynamic memory device to compensate for increased leakage at higher temperatures and more closely tailor the timing of the refresh operations to the conditions of the dynamic memory device.
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A. Bakker, et al. “Micropower CMOS Temperature Sensor with Digital Output”IEEE Journal of Solid-State Circuits,vol. 31 No. 7, Jul. 1996.
J. Sim, et al. “Binary Weighted Temperature Sensor Adjustment Schemes” pp. 294-297,Symposium of VLSI Circuits,2002.
Hush Glen E.
Sinha Manoj K.
Micron Technology
Nguyen Van Thu
Williams Morgan & Amerson
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