Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Reexamination Certificate
2001-07-20
2009-12-29
Turocy, David (Department: 1792)
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
C427S255380, C427S255370, C427S096100, C427S097100, C427S099200
Reexamination Certificate
active
07638161
ABSTRACT:
A method and apparatus for controlling dopant concentration during borophosphosilicate glass film deposition on a semiconductor wafer to reduce consumption of nitride on the semiconductor wafer. In one embodiment of the invention, the method starts by placing a substrate having a nitride layer in a reaction chamber and providing a silicon source, an oxygen source and a boron source into the reaction chamber while delaying providing a phosphorous source into the reaction chamber to form a borosilicate glass layer over the nitride layer. The method continues by providing the silicon, oxygen, boron and phosphorous sources into the reaction chamber to form a borophosphosilicate film over the borosilicate glass layer.
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Chandran Shankar
Mukai Kevin
Applied Materials Inc.
Blakely & Sokoloff, Taylor & Zafman
Turocy David
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