Method and apparatus for cleaning integrated circuit wafers

Details Method and apparatus for cleaning integrated circuit wafers Method and apparatus for cleaning integrated circuit wafers

1988-09-26

1989-09-05

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 1, 134102, 156643, 156662, 156345, 20419232, 204298, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048635618

ABSTRACT:
The described embodiment of the present invention provides a method and device for cleaning the surface of a silicon wafer using dry gases. At least one of the gases provided is excited by passing the gas through a microwave plasma generator or by heating the wafer thereby exciting the gases near the surface of the wafer. The excitation of the gases causes chemical reactions similar to those induced by ionization of the nongaseous cleaning materials in water. After a suitable etching period, the etching chamber is purged using an insert gas, such as nitrogen, which helps carry away the remaining reacted contaminants.

REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4192706 (1980-03-01), Horiike
patent: 4615756 (1986-10-01), Tsujii et al.
patent: 4643799 (1987-02-01), Tsujii et al.
patent: 4664747 (1987-05-01), Sekiguchi et al.
patent: 4689112 (1987-08-01), Bersin

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