Method and apparatus for blanket aluminum CVD on spherical integ

Details Method and apparatus for blanket aluminum CVD on spherical integ Method and apparatus for blanket aluminum CVD on spherical integ

1998-07-10

2000-09-12

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438677, 118723R, 118716, 427253, 42725528, H01L 2144

Patent

active

061177725

ABSTRACT:
A method and apparatus for metal-organics chemical vapor deposition (MO CVD) of a metal layer upon a spherical substrate at atmospheric pressure are disclosed. The method includes pretreating the spherical substrate with a vapor of a first precursor in preparation for a deposition of a metal layer. The pretreated spherical substrate is then exposed to a thermally dissociated precursor of metal for depositing the metal layer onto the spherical substrate, wherein the exposure to the thermally dissociated precursor of metal provides a uniformly deposited metal layer coverage over the pretreated spherical substrate. The deposited metal layer is then annealed and cooled.

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Using In-Situ Copper Doped Aluminum Chemical Vapor Deposition, IEDM 97, pp. 781-784.

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