Static information storage and retrieval – Systems using particular element – Flip-flop
Patent
1996-12-31
1999-04-27
Nelms, David
Static information storage and retrieval
Systems using particular element
Flip-flop
365156, G11C 1100
Patent
active
058986103
ABSTRACT:
A method and apparatus to increase the size of the design window for write margin and read stability margin of memory cells without requiring a voltage above the power supply voltage or below ground. An SRAM consisting of an SRAM cell having a ground reference and a circuit coupled to receive a first signal and coupled to drive the ground reference. The circuit is configured to drive the ground reference to a first voltage if the first signal is in a first state. The circuit is configured such that the first node is at a second voltage if the first signal in a second state, the first signal being in the first state indicating a write operation, the first signal being in the second state indicating a non-write operation, the first voltage being greater than the second voltage.
REFERENCES:
patent: Re33694 (1991-09-01), McElroy
patent: 5301146 (1994-04-01), Hama
"1996 Symposium on VLSI Circuits," Digest of Technical Papers, IEEE, Honolulu, Jun. 13-15, 1996, pp. iii-xxvii and 126-127.
IEEE Solid State Circuits Coucis, 1996 Symposium on VLSI Circuits, Digest of Technical Papers, Honolulu, Jun. 13-15, 1996, pp. iii-xxviii and pp. 126-127.
Intel Corporation
Nelms David
Tran M.
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