Method and apparatus for bending electrostatic switch

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257SE29029, C200S181000, C333S262000

Reexamination Certificate

active

07355258

ABSTRACT:
An electronic circuit is formed by closely spacing metallic gate and drain interconnects to a flexible portion of a source interconnect. A gate voltage results in electrostatic attraction and lateral mechanical movement of the flexible source interconnect portion and causes an electrical short between source and drain. VanderWaals attraction between contacting source and drain can be used to provide volatile switching (springy thicker source portion) and non-volatile switching (limp thinner source portion). In accordance with the invention, an easily fabricated, high speed, low power, radiation hard, temperature independent, integrated reconfigurable electronic circuit with embedded logic and non-volatile memory can be realized. The switch uses patterned interconnect material for its structure and can be incorporated to a 3D layered structure consisting of three dimensional interconnect in which different layers and portions of the circuits are linked through volatile and non-volatile switches.

REFERENCES:
patent: 5638946 (1997-06-01), Zavracky
patent: 6020564 (2000-02-01), Wang et al.
patent: 6115231 (2000-09-01), Shirakawa
patent: 6487151 (2002-11-01), Nagata et al.
patent: 6534839 (2003-03-01), Frazier et al.
patent: 6646215 (2003-11-01), Nelson
patent: 6847152 (2005-01-01), Miller et al.
patent: 6924966 (2005-08-01), Prophet
patent: 6936780 (2005-08-01), Zhang et al.
patent: 7026697 (2006-04-01), Sherrer
patent: 7242273 (2007-07-01), Isobe et al.
patent: 7256669 (2007-08-01), Morrison et al.
“Laterally Driven Polysilicon Resonant Microstructures,” W. Tang, T. Nguyen and R. Howe, Sensors & Actuators A, 25-32 (1989).

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