Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1978-05-12
1979-02-27
Bernstein, Hiram H.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
422249, B01J 1718
Patent
active
041417798
ABSTRACT:
In Czochralski crystal growing operations, particularly those involving growth of silicon crystals, projecting formations of silicon monoxide sometimes form on the surface of the melt-containing crucible just above the initial level of the melt. These formations are avoided by perturbing chemical formation conditions at the region of probable formation. Such perturbations may be provided by a tube through which either a positive pressure of a gas, such as argon, is directed toward the region of probable formation or through which a negative pressure may be applied to perturb the formation conditions.
REFERENCES:
patent: 3353914 (1967-11-01), Pickar
patent: 4036595 (1977-07-01), Lorenzini
Chartier et al., Solid State Technology, Feb. 1975, pp. 31-33.
Hill David W.
Katz Lewis E.
Lavigna Robert J.
Reusser Raymond E.
Bell Telephone Laboratories Incorporated
Bernstein Hiram H.
Peters Robert Y.
Western Electric Company Inc.
LandOfFree
Method and apparatus for avoiding undesirable deposits in crysta does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for avoiding undesirable deposits in crysta, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for avoiding undesirable deposits in crysta will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-721387