Method and apparatus for analyzing composition of defects

Details Method and apparatus for analyzing composition of defects Method and apparatus for analyzing composition of defects

2005-03-22

2005-03-22

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S306000, C250S307000, C250S310000, C250S492100, C438S014000, C356S237100, C382S145000

Reexamination Certificate

active

06870169

ABSTRACT:
In order to be able to detect an irradiation position of an electron beam matching a defect position and conduct composition analysis of a defect with high precision and high efficiency, in the present invention, when a composition analysis target defect is selected and irradiation conditions of the electron beam are set for EDX analysis, a low-resolution reference image of low resolution is acquired using the electron beam at a defect corresponding position corresponding to the position of this defect on a chip in the vicinity of a target chip including defects, and a low-resolution defect image of the same low resolution is next acquired at the defect position of the target chip. Then, by comparing these low-resolution images, the defect position is acquired, the electron beam is slanted and irradiated on this defect position to acquire a composition spectrum of the defect.

REFERENCES:
patent: 6476913 (2002-11-01), Machida et al.
patent: 6480279 (2002-11-01), Nara et al.
patent: 6792359 (2004-09-01), Ninomiya et al.
patent: 01-143127 (1989-06-01), None
patent: 08-021803 (1996-01-01), None
patent: 08-148111 (1996-06-01), None
patent: 10-027833 (1998-01-01), None
patent: 2000-030652 (2000-01-01), None

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