Semiconductor device manufacturing: process – Masking – Step and repeat
Reexamination Certificate
2008-07-08
2008-07-08
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Masking
Step and repeat
C438S947000, C257SE21038, C257SE21039, C716S030000
Reexamination Certificate
active
11150408
ABSTRACT:
Variations in the pitch of features formed using pitch multiplication are minimized by separately forming at least two sets of spacers. Mandrels are formed and the positions of their sidewalls are measured. A first set of spacers is formed on the sideswalls. The critical dimension of the spacers is selected based upon the sidewall positions, so that the spacers are centered at desired positions. The mandrels are removed and the spacers are used as mandrels for a subsequent spacer formation. A second material is then deposited on the first set of spacers, with the critical dimensions of the second set of spacers chosen so that these spacers are also centered at their desired positions. The first set of spacers is removed and the second set is used as a mask for etching a substrate. By selecting the critical dimensions of spacers based partly on the measured position of mandrels, the pitch of the spacers can be finely controlled.
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