Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Reexamination Certificate
2006-10-03
2006-10-03
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
C438S005000, C438S014000, C438S016000, C438S700000, C438S712000, C438S508000
Reexamination Certificate
active
07115426
ABSTRACT:
A method for utilizing interference fringe patterns generated when milling a trench through a semiconductor substrate by a method such as FIB milling, to determine and optimize the thickness uniformity of the trench bottom. The interference fringes may be mapped and the mapping used to direct the FIB milling to those regions which are thicker to correct observed non-uniformities in the trench floor thickness by varying the pixel dwell time across the milled area. The interference fringe mapping may be used to develop computerized contour lines to automate the pixel dwell time variations as described above, for correcting non-uniformities in the trench floor thickness. The method may be applied to applications other than trench formation for backside editing, such as monitoring progress in forming a milled object.
REFERENCES:
patent: 4717681 (1988-01-01), Curran
patent: 5578161 (1996-11-01), Auda
patent: 5616921 (1997-04-01), Talbot et al.
patent: 5724144 (1998-03-01), Muller et al.
patent: 6225626 (2001-05-01), Talbot et al.
patent: 6955930 (2005-10-01), Le Roy et al.
patent: 2003/0165749 (2003-09-01), Fritze et al.
patent: 2003/0224543 (2003-12-01), Roy et al.
patent: 2005/0236583 (2005-10-01), Roy et al.
Cryan et al. (Modelling and Measurement of 2D Photonic Crystals with Tapered Hole Profiles, Proceedings of 2003 5th inter Conference on Transparent Optical Networks, Jun. 29-Jul. 3, 2003, vol. 1 pp. 344-347).
Kaushal Verma and Bongtae Han, “Sensitivity Enhancement of Far-Infrared Fizeau Interferometry by Digital Image Processing”, Opt. Eng. 40(9), Sep. 2001, pp. 1970-1977.
Coupanec Patricia Le
Johri Lokesh
Le Roy Erwan
Lundquist Theodore R.
Thompson Mark A.
Credence Systems Corporation
Smith Matthew
Stark Jarrett J.
Wenocur Deborah W.
LandOfFree
Method and apparatus for addressing thickness variations of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for addressing thickness variations of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for addressing thickness variations of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3674781