Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1976-01-30
1978-07-25
Konick, Bernard
Static information storage and retrieval
Systems using particular element
Semiconductive
365230, 365240, G11C 1140
Patent
active
041033442
ABSTRACT:
A method and apparatus for charge addressing a non-volatile MNOS memory cell in a LSI array of memory cells, is disclosed. Each MNOS cell of the array is made up of a substrate; adjacent diffusion areas in the substrate; a memory window intermediate the adjacent diffusion areas, controlled by a memory gate; and an enable gate adjacent the memory window and overlapping one of the diffusion areas. The memory gate and the enable gate are each separated from the substrate and each other by silicon dioxide/silicon nitride layers to provide a capacitive dielectric. Addressing of an individual cell in the array is achieved by selective activation of a corresponding enable gate and a corresponding memory gate, which are formed in an orthogonal grid array. The cell is accessed by a single stage of a shift register for both read and write operations through a transfer gating means.
REFERENCES:
patent: 3720922 (1973-03-01), Kosonocky
patent: 3728695 (1973-04-01), Bentchkowsky
patent: 3851317 (1974-11-01), Kenyon
patent: 3914750 (1975-09-01), Hadden
Fagan John Lee
Lampe Donald Ross
White Marvin Hart
Konick Bernard
McElheny Donald
Patterson H. W.
Westinghouse Electric Corp.
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