Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Reexamination Certificate
2007-04-17
2007-04-17
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
C257S501000, C257S506000
Reexamination Certificate
active
11122635
ABSTRACT:
Method and apparatus for a semiconductor device including high voltage MOS transistors is described. A substrate is provided with a low voltage and a high voltage region separated one from the other. Isolation regions containing an insulator are formed including at least one formed within one of said wells within the high voltage region. The angle of the transition from the active areas to the isolation regions in the high voltage device region is greater than a predetermined angle, in some embodiments it is greater than 40 degrees from vertical. In some embodiments the isolation regions are formed using shallow trench isolation techniques. In alternative embodiments the isolation regions are formed using field oxide formed by local oxidation of silicon techniques.
REFERENCES:
patent: 6080637 (2000-06-01), Huang et al.
patent: 6784077 (2004-08-01), Lin et al.
patent: 2004/0014281 (2004-01-01), Kim et al.
Sallagoity, P., et al., “Analysis of Width Edge Effects in Advanced Isolation Schemes for Deep Submicron CMOS Technologies,” IEEE Transactions on Electron Devices, vol. 43, No. 11, Nov. 1996, pp. 1900-1906.
Chang Chi-Hsuen
Chen Chung-I
Huang Chih Po
Huang Tsung-Yi
Liu Jun Xiu
Owens Douglas W.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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