Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2008-02-08
2009-10-20
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S762000, C257S700000, C438S652000
Reexamination Certificate
active
07605460
ABSTRACT:
A method and apparatus is provided to reduce the spreading inductance and increase the distributed capacitance of power planes within the power distribution system of a semiconductor package substrate. In one embodiment, pre-fabricated copper-clad laminate (CCL) structures are utilized as starting material for the power plane pairs, which are then integrated into a package substrate using imaging, lamination, and drilling/plating processes. In alternate embodiments, a starting material having a larger insulating layer thickness may be used to form the CCL structure, whereby a pair of metallic planes having a perforated mesh pattern are adjoined through a dielectric layer to create an effective separation distance between the metallic planes. Alternate embodiments employ plating or deposition methods to obtain a minimum separation distance between the metallic planes of a power plane pair.
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Chee Soon-Shin
Wu Paul Ying-Fung
Clark S. V
Wallace Michael T.
Xilinx , Inc.
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