Method and apparatus for a metallic dry-filling process

Details Method and apparatus for a metallic dry-filling process Method and apparatus for a metallic dry-filling process

2005-09-30

2008-03-25

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S099000, C438S596000, C438S610000, C257SE21011

Reexamination Certificate

active

07348266

ABSTRACT:
An iPVD system is programmed to deposit uniform material, such as a metallic material, into high aspect ratio nano-sized features on semiconductor substrates using a process that enhances the feature filling compared to the field deposition, while maximizing the size of the grain features in the deposited material opening at the top of the feature during the process. Plural sequential dry filling plasma processes are used with backside gas pressure varied to control substrate temperature.

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