Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1998-12-28
2000-02-22
Teska, Kevin J.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
39550019, 257301, 257309, G06F 1750, H01L 27105
Patent
active
060289902
ABSTRACT:
Linear integrated circuit capacitors having greater capacitance per unit area by using lateral flux. One embodiment comprises a two metal layer capacitor wherein each metal layer is comprised of two capacitor conductive components. The capacitor conductive components are cross-coupled so that the total capacitance is the sum of the vertical flux between the metal layers, and the lateral flux along the edges between the two capacitor conductive components in each of the metal layers. The lateral flux between the capacitor conductive components in a single metal layer increases the capacitance per unit area and decreases the bottom-plate parasitic capacitance. Increasing the length of the common edge formed by capacitor conductive components in a metal layer increases the capacitance per unit area. In one lateral flux capacitor, each metal layer is comprised of a plurality of rows, alternate rows are coupled together such that lateral flux is generated between each of the rows. The rows are also cross-coupled with rows in adjacent metal layers to provide vertical flux. Fractal shapes can be used to maximize the length of the perimeter of adjacent capacitor conductive components in a single metal layer. The Koch Islands and Minkowski Sausage families of fractals are particularly well suited for generating capacitor conductive component perimeter shapes. These fractals are generated by selecting an initiator shape and repeatedly applying a generator. The fractal shapes are generated by a computer program based upon user input parameters.
REFERENCES:
patent: 4694403 (1987-09-01), Nomura
patent: 5322438 (1994-06-01), McNutt et al.
patent: 5490083 (1996-02-01), Toyonaga et al.
Jun et al., "The fabrication and electrical properties of modulated stacked capacitor for advanced DRAM applications", IEEE Electron Device Letters, vol. 13, No. 8, Aug. 1992, pp. 430-432.
Huang et al., "A new stack capacitor for polysilicon active matrix arrays (TFTs)", International Electron Devices Meeting, 1989, Technical Digest, Dec. 3, 1989, pp. 357-360 (13.6.1-13.6.4).
Hamada et al., "A Split-Level Diagonal Bit-line (SLDB) stacked capacitor cell for 256 Mb DRAMs", International Electron Devices Meeting, 1992, Technical Digest, Dec. 13, 1992, pp. 799-802.
Business Communications Company, Inc., "Multilayer Capacitor Based on Thin Film", Battery & EV Technology, vol. 20, No. 6, Oct. 1, 1995, 2 pages.
Johnson, "Fractal tool for the masses", Electronic Engineering Times, No. 846, p. 14 (2 pages), May 2, 1995.
Lee Thomas H.
Samavati Hirad
Shaeffer Derek K.
Shahani Arvin R.
Walther Steven
Kik Phallaka
Teska Kevin J.
The Board of Trustees of the Leland Stanford Junior University
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