Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1996-05-01
1999-08-10
Russel, Jeffrey E.
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
118723MP, 118723MA, 118723E, 134 11, 31511121, 427569, 427571, C23C 1650, H05H 110, H05H 136
Patent
active
059354550
ABSTRACT:
A method for excitation of a plasma, characterized in that it comprises the step of subjecting a gas to an electric field generated by an electrode system comprising n electrodes, n being an integer greater than or equal to 3, preferably between 3 and 30, each of the n electrodes being connected to one of the following AC voltages: ##EQU1## where: f is a frequency in the range of 10 to 10000 Hz, preferably 30 to 200 Hz, more preferably 50 to 60 Hz, U.sub.0 is a voltage in the range of 50 to 10000 V,
at least one electrode being connected to U.sub.r, at least one electrode being connected to Us and at least one electrode being connected to U.sub.t. The invention also concerns an electrode system for carrying out the method.
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NKT Research Center A/S
Russel Jeffrey E.
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