Metalorganic chemical vapor deposition of layered structure oxid

Details Metalorganic chemical vapor deposition of layered structure oxid Metalorganic chemical vapor deposition of layered structure oxid

1994-09-02

1995-12-26

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427 81, 427 99, 427124, 4271263, 427161, 4272553, 427294, 427314, 427404, 4274193, 4274197, 427576, 427585, 427586, 427595, B05D 306

Patent

active

054786100

ABSTRACT:
A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system. The ferroelectric films can be used for device applications such as in capacitors, dielectric resonators, heat sensors, transducers, actuators, nonvolatile memories, optical waveguides and displays.

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