Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-01-16
1998-02-10
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257535, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
057172340
ABSTRACT:
A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a MOCVD process including the steps of providing a semiconductor substrate, heating the substrate, exposing the substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2, thereafter exposing the substrate to precursors including at least TiO(C.sub.2 H.sub.5).sub.4 and thereafter exposing the substrate to precursors including at least Ru (C.sub.5 H.sub.5).sub.2.
REFERENCES:
patent: 5559733 (1996-09-01), McMillan et al.
Desu Seshu B.
Peng Chien-Hsiung
Si Jie
Crane Sara W.
Sharp Kabushiki Kaisha
Virginia Tech Intellectual Properties Inc.
Wille Douglas A.
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