Metalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)R

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257296, 257535, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

057172340

ABSTRACT:
A dynamic random access memory device having a ferroelectric thin film perovskite (Ba.sub.1-x Sr.sub.x)TiO.sub.3 layer sandwiched by top and bottom (Ba.sub.1-x Sr.sub.x)RuO.sub.3 electrodes. The memory device is made by a MOCVD process including the steps of providing a semiconductor substrate, heating the substrate, exposing the substrate to precursors including at least Ru(C.sub.5 H.sub.5).sub.2, thereafter exposing the substrate to precursors including at least TiO(C.sub.2 H.sub.5).sub.4 and thereafter exposing the substrate to precursors including at least Ru (C.sub.5 H.sub.5).sub.2.

REFERENCES:
patent: 5559733 (1996-09-01), McMillan et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Metalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)R does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Metalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)R, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metalorganic chemical vapor deposition of (ba.sub.1-x Sr.sub.x)R will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2079261

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.