Metallocenyl dendrimer, organic memory device using the same...

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Reexamination Certificate

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C428S457000, C428S688000, C428S689000, C428S702000, C428S704000, C257S040000, C427S058000

Reexamination Certificate

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08003221

ABSTRACT:
Disclosed are a metallocenyl dendrimer, an organic memory device using the metallocenyl dendrimer and a method for fabricating the organic memory device. The metallocenyl dendrimer may be composed of a dendrimer and metallocenes as redox species linked to the dendrimer. The organic memory device may possess the advantages of shorter switching time, decreased operating voltage, decreased fabrication costs and increased reliability. Based on these advantages, the organic memory device may be used as a highly integrated, large-capacity memory device.

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patent: WO 2005092906 (2005-10-01), None
Thomas et al, Star-shaped polyferrocenes based on thiophene and triphenylamine: synthesis, spectroscopy and electrochemistry, Journal of Organic Chemistry 637-639, 2001, pp. 139-144.
Casado et al, Redox-active ferrocenyl dendrimers and polymers in solution and immobilised on electrode surfaces, Coordination Chemistry Reviews 185-186, 1999, pp. 53-79.

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