Metallized semiconductor device including an interface layer

Stock material or miscellaneous articles – Composite – Of bituminous or tarry residue

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357 2, 357 4, 357 59, 357 65, 357 67, 357 68, 428620, 428660, H01L 2348, H01L 4500, H01L 2904

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047258772

ABSTRACT:
Structures of alternating amorphous layers of titanium and a semiconductor material serve as effective interface layers between an insulator or semiconductor material and an aluminum metallization material in semiconductor devices. Such structures effectively serve to minimize interdiffusion during device manufacture without undue increase in electrical contact resistance during device operation.

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patent: 4135292 (1979-01-01), Jaffe et al.
IBM, "Ohmic Contacts to Semiconductor Devices Using Barrier Layers of Aluminum and Titanium", IBM Technical Disclosure Bulletin, vol. 28, No. 4, Sep. 1985.
Wiley et al, "Amorphous Metallizations for High Temperature Semiconductor Device Applications", IEEE Transactions on Industrial Electronics, vol. IE-29, No. 2, May 1982.
Suni and Nicolet, "Stability of Amorphous Fe-W Alloys in Multilayer Metallizations on Silicon", Thin Solid Films, 107 (1983), pp. 73-80.

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