Metallized conductive strap spacer for SOI deep trench...

Details Metallized conductive strap spacer for SOI deep trench... Metallized conductive strap spacer for SOI deep trench...

2011-05-10

2011-05-10

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S347000, C257SE29345, C257SE21646

Reexamination Certificate

active

07939876

ABSTRACT:
A conductive strap spacer is formed within a buried strap cavity above an inner electrode recessed below a top surface of a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A portion of the conductive strap spacer is metallized by reacting with a metal to form a strap metal semiconductor alloy region, which is contiguous over the conductive strap spacer and a source region, and may extend to a top surface of the buried insulator layer along a substantially vertical sidewall of the conductive strap spacer. The conductive strap spacer and the strap metal semiconductor alloy region provide a stable electrical connection between the inner electrode of the deep trench capacitor and the source region of the access transistor.

REFERENCES:
patent: 4988637 (1991-01-01), Dhong et al.
patent: 5804851 (1998-09-01), Noguchi et al.
patent: 6090660 (2000-07-01), Noble, Jr.
patent: 6472702 (2002-10-01), Shen
patent: 6930012 (2005-08-01), Matsubara
patent: 6953961 (2005-10-01), Lee et al.

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