Metallization process using artificial gravity

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438637, 438631, 438632, 438672, 438669, H01L 2144

Patent

active

058664785

ABSTRACT:
Voids in via holes in integrated circuits have been effectively removed by heating the vias to a relatively low temperature and then subjecting the entire structure (including the vias) to artificial gravitational forces. Said forces may be steadily applied, as in centrifuging, or they may be applied intermittently by using a jerking motion which is repeated several times. A number of different ways for implementing such jerking motion are described. These include magnetic repulsion, vertical pulling by a motor, and providing a pressure differential between the top and bottom sides of the integrated circuit holder.

REFERENCES:
patent: 3716461 (1973-02-01), Ahmad
patent: 5002115 (1991-03-01), Noordegraaf et al.
patent: 5712207 (1998-01-01), Lee et al.

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