Metallization method of semiconductor device

Details Metallization method of semiconductor device Metallization method of semiconductor device

2005-12-29

2008-03-18

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S639000, C438S648000, C438S675000, C438S680000, C438S700000, C438S702000, C438S703000

Reexamination Certificate

active

07344974

ABSTRACT:
A method for forming a metallization contact in a semiconductor device includes the steps of: (a) forming an insulating layer on a semiconductor substrate including an active device region; (b) forming a contact hole to expose a portion of the active device region by etching a portion of the insulating layer; (c) forming a CVD TiN layer on the insulating layer and inside the contact hole; (d) forming a PVD TiN layer on the CVD TiN layer using ionized metal plasma sputtering; and (e) forming a metal layer on the PVD TiN layer.

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