Metallization layer for a power semiconductor device

Details Metallization layer for a power semiconductor device Metallization layer for a power semiconductor device

2006-05-18

2010-06-15

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S674000

Reexamination Certificate

active

07737560

ABSTRACT:
A power semiconductor IC device is disclosed. In one embodiment, the device includes a substrate, and a layer structure formed on the substrate. The layer structure includes a metallization layer including copper, wherein the metallization layer is formed as a stack structure including at least two copper layers and a stabilization layer between the two copper layers.

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patent: 2006/0160349 (2006-07-01), Wong et al.
patent: 2006/0202346 (2006-09-01), Shih et al.

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