Metallization contact structures and methods for forming...

Details Metallization contact structures and methods for forming... Metallization contact structures and methods for forming...

2007-12-21

2010-10-26

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S572000, C438S573000, C438S584000, C438S613000, C257SE21411, C257SE21413

Reexamination Certificate

active

07820540

ABSTRACT:
Metallization contact structures and methods for forming a multiple-layer electrode structure on solar cells include depositing a conductive contact layer on a semiconductor substrate and depositing a metal bearing ink onto a portion of the conductive contact layer, wherein exposed portions of the conductive contact layer are adjacent to the metal bearing ink. The conductive contact layer is patterned by removing exposed portions of the conductive contact layer from the semiconductor substrate. The metal bearing ink is aligned with openings in a dielectric layer of the semiconductor substrate and with unexposed portions of the conductive contact layer. The unexposed portions of the conductive contact layer are interposed between the metal bearing ink and the dielectric layer such that the conductive contact layer pattern is aligned with metal bearing ink. The semiconductor substrate is thermally processed to form a current carrying metal gridline by sintering the metal bearing ink.

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