Metallization and its use in, in particular, an IGBT or a diode

Details Metallization and its use in, in particular, an IGBT or a diode Metallization and its use in, in particular, an IGBT or a diode

2011-08-30

2011-08-30

Parker, Ken A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S197000, C257S502000, C257S503000, C257S584000, C257S587000, C257SE29114, C257SE29118, C257SE29198, C438S122000

Reexamination Certificate

active

08008712

ABSTRACT:
The invention relates to a metallization for an IGBT or a diode. In the case of this metallization, a copper layer (10, 12) having a layer thickness of approximately 50 μm is applied to the front side and/or rear side of a semiconductor body (1) directly or if need be via a diffusion barrier layer (13, 14). The layer (8, 12) has a specific heat capacity that is at least a factor of 2 higher than the specific heat capacity of the semiconductor body (1). It simultaneously serves for producing a field stop layer (5) by proton implantation through the layer (12) from the rear side and for masking a proton or helium implantation for the purpose of charge carrier lifetime reduction from the front side of the chip (1).

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