Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-03-23
1997-09-30
Kunemund, Robert
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419225, 437 21, 437 24, 437187, 437192, 437240, 437242, 427523, 427527, C23C 1434, C23C 1448, H01L 21265, H01L 2102
Patent
active
056722516
ABSTRACT:
The method for producing a metallic wiring board of this invention comprises the steps of: implanting nitrogen on a surface of a substrate; forming a metallic film including, as a main component, one of Ta and Nb on the surface of the substrate where nitrogen is implanted by a sputtering method to form a metallic wiring by patterning the metallic film; and forming an insulating film by anodic oxidation of a surface of the metallic wiring. In the step of forming a metallic wiring form Ta or Nb on a substrate or a protective layer including nitrogen to anodic-oxidize the surface of the metallic wiring, Ta ions or Nb ions do not enter the substrate. Further, the substrate or a protective layer is doped with nitrogen, and a Ta layer is formed by the sputtering method thereon. The sputtering method has a characteristic that a material contained in the substrate is mixed into a film formed in the initial stage of the coating. Therefore, the doped nitrogen enters the Ta film, and a thin .alpha.-Ta layer is formed on the substrate or the protective film. The Ta layer to be epitaxially grown thereon is an .alpha.-Ta layer including no impurity. Thus, a Ta layer with a specific resistance of about 25 .mu..OMEGA.cm is obtained.
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Goto Masahito
Hibino Yoshitaka
Hirata Mitsuaki
Morimoto Hiroshi
Nagayasu Takayoshi
Kunemund Robert
McDonald Rodney G.
Sharp Kabushiki Kaisha
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