Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2006-03-21
2006-03-21
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C438S679000
Reexamination Certificate
active
07015495
ABSTRACT:
The present invention relates to an ultra-thin metal film, an ultra-thin metal multilayer film, and a method of fabricating an ultra-thin metal film or an ultra-thin metal multilayer film. The ultra-thin metal film and the ultra-thin metal multilayer film can be obtained by forming a dielectric film on a conductive base material in a film thickness that causes the significant tunneling effect between metals through the thin dielectric film, or a film thickness whereby the valence electrons and holes of the metal composing the metallic base material and the ultra-thin metal film are affected by the many-body effects, for example, in a film thickness wherein the band-gap width of said dielectric is narrowed; and the ultra-thin metal films are formed on the dielectric grown in the layer-by-layer mode by the deposition method. According to the present invention, an ultra-thin metal film or a film wherein ultra-thin metal films are multilayered can be obtained without forming clusters, and the present invention can be applied for the extension of the life of catalysts, the densification of integrated circuits and the like.
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Dolan Jennifer M
Jr. Carl Whitehead
Nippon Sheet Glass Co., Japan
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