Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2006-08-22
2006-08-22
Thai, Luan (Department: 2827)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S779000, C257S764000, C438S614000
Reexamination Certificate
active
07095121
ABSTRACT:
An integrated circuit chip 501 has a plurality of contact pads (FIG.5B) to be connected by reflow attachment510to outside parts. The chip comprises a deposited layer505of nickel/titanium alloy on each of the pads; the alloy has a composition and crystalline structure operable in reversible phase transitions under thermomechanical stress, whereby mechanical strain is absorbed by the alloy layer. Preferably, the alloy has between 55.0 and 56.0 weight % nickel, between 44.0 and 45.0 weight % titanium, and a thickness in the range from 0.3 to 6.0 μm, recrystallized after deposition in a temperature range from 450 to 600° C. for a time period between 4 and 6 min. A layer506of solderable metal is on the alloy, operable as diffusion barrier after reflow attachment.
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Brady III Wade James
Telecky , Jr. Frederick J.
Texas Instrument Incorporated
Thai Luan
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