Metallic precipitate monitoring method

Details Metallic precipitate monitoring method Metallic precipitate monitoring method

1996-11-25

1999-03-16

Grumbling, Matthew V.

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

216 58, 216 60, 216 61, H01L 2100, H01L 21306

Patent

active

058825371

ABSTRACT:
Disclosed is a method of etching which makes the quantitative analysis possible and easier. In the prior art, chemical plasma etching is mainly by ion bombardment, and the tool used to observe the metal bulk is transmission electron microscopy (TEM), so it is very difficult and complicated to execute quantitative analysis. By using chemical plasma etching, the metal precipitate will be left almost all at the end of etching. Scanning electron microscopy (SEM) is used instead of TEM to perform the quantitative analysis.

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