Metallic electrode forming method and semiconductor device...

Details Metallic electrode forming method and semiconductor device... Metallic electrode forming method and semiconductor device...

2011-03-22

2011-03-22

Ho, Tu-Tu V (Department: 2818)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

With attachment to temporary support or carrier

C438S666000, C438S614000, C257S773000, C257S737000, C257S781000, C257SE21508, C257SE21599

Reexamination Certificate

active

07910460

ABSTRACT:
A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.

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