Metal wiring structures for integrated circuits including seed l

Details Metal wiring structures for integrated circuits including seed l Metal wiring structures for integrated circuits including seed l

1998-01-30

2000-04-04

Speer, Timothy

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428614, 428620, 428627, 428651, 428901, 257751, 257763, 257765, B32B 300

Patent

active

060458925

ABSTRACT:
Metal wiring structures for integrated circuits include a seed layer formed on an integrated circuit substrate and a wetting layer formed on the seed layer opposite the integrated circuit substrate. A metal wiring layer is formed on the wetting layer opposite the seed layer. The seed layer and the metal wiring layer have the same crystal orientation. In a preferred embodiment, the seed layer is an aluminum layer having (111) crystal orientation and the metal wiring layer includes aluminum having (111) crystal orientation. The metal wiring layer may be aluminum or an aluminum alloy. The wetting layer preferably includes titanium.

REFERENCES:
patent: 5668411 (1997-09-01), Hong et al.
patent: 5776831 (1998-07-01), Padmanabhan et al.
patent: 5869901 (1999-02-01), Kusuyama
Onoda et al., "Effects of Insulator Surface Roughness on Al-Alloy Film Properties and Electromigration Performance in Al-Alloy/Ti Insulator Layered Interconnects",J.Vac.Sci.Technol. B,14(4),Jul./Aug. 1996, pp. 2645-2655.
Onoda et al., "Al-Si Crystallographic-Orientation Transition in Al-Si/TiN Layered Structures and Electromigration Performance as Interconnects",J. Appl. Phys., 77(2), Jan. 15, 1995, pp. 885-892.
Shibata et al., "The Effects of Al(111) Crystal Orientation on Electromigration in Half-Micron Layered Al Interconnects", Jpn. J. Appl. Phys. vol. 32, 1993, pp. 4479-4484.
Hashimoto et al., "Bias-Induced Structure Transition in Reactively Sputtered TiN Films", Applied Physics Letters, vol. 54, No. 2, 1998, pp. 120-122.

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