Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2011-01-18
2011-01-18
Warren, Matthew E (Department: 2815)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S009000, C438S013000, C438S427000, C257S734000, C257S751000
Reexamination Certificate
active
07871829
ABSTRACT:
A metal wiring forming method in a semiconductor device can include forming an interlayer insulating film on a lower metal wiring, the first interlayer insulating film having a non-planar upper surface; forming a stop layer on the interlayer insulating film and over the lower metal wiring; forming an interlayer insulating film pattern on the stop layer, wherein an upper surface of the interlayer insulating film pattern and an upper surface of the stop layer are substantially coplanar; removing a portion of the stop layer to form a stop layer pattern, wherein a portion of the interlayer insulating film over the lower metal wiring is exposed by the stop layer pattern; and etching the exposed portion of the interlayer insulating film to form a via hole therethrough, wherein the lower metal wiring is exposed by the via hole.
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Jiang Fang-Xing
Myers Bigel & Sibley Sajovec, PA
Samsung Electronics Co,. Ltd.
Warren Matthew E
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