Metal thin film and semiconductor comprising a metal thin film

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S783000, C438S785000, C438S508000

Reexamination Certificate

active

07419920

ABSTRACT:
A metal oxide thin film may be obtained by providing a source gas and an oxidizer gas. The source gas may include a hydrolyzable metallic compound. The oxidizer gas may include a hydrate of a metal salt. The metal oxide thin film may be obtained by alternately feeding the source gas and the oxidizer gas into a reaction chamber in which a substrate is placed.

REFERENCES:
patent: 2002/0050306 (2002-05-01), Nishiuchi et al.
patent: 2004/0168627 (2004-09-01), Conley et al.
Mikko Ritala et al.; “Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources”; Science; vol. 288; Apr. 14, 2000; pp. 319-321.
J. F. Conley, Jr., et al.; “Pulsed deposition of metal-oxide thin films using dual metal precursors”; Applied Physics Letters; vol. 84, No. 3; Jan. 19, 2004; pp. 398-400.

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