Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-12-12
2008-09-02
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S783000, C438S785000, C438S508000
Reexamination Certificate
active
07419920
ABSTRACT:
A metal oxide thin film may be obtained by providing a source gas and an oxidizer gas. The source gas may include a hydrolyzable metallic compound. The oxidizer gas may include a hydrate of a metal salt. The metal oxide thin film may be obtained by alternately feeding the source gas and the oxidizer gas into a reaction chamber in which a substrate is placed.
REFERENCES:
patent: 2002/0050306 (2002-05-01), Nishiuchi et al.
patent: 2004/0168627 (2004-09-01), Conley et al.
Mikko Ritala et al.; “Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources”; Science; vol. 288; Apr. 14, 2000; pp. 319-321.
J. F. Conley, Jr., et al.; “Pulsed deposition of metal-oxide thin films using dual metal precursors”; Applied Physics Letters; vol. 84, No. 3; Jan. 19, 2004; pp. 398-400.
Iwamoto Kunihiko
Nabatame Toshihide
Tominaga Koji
Cantor & Colburn LLP
HORIBA Ltd.
Le Dung A.
Renesas Technology Corp.
Rohm & Co., Ltd.
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