Metal thin film and method of manufacturing the same,...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Reexamination Certificate

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07425738

ABSTRACT:
A metal thin film provided on a substrate and having a metal with a face-centered cubic crystal structure, wherein the metal thin film is preferentially oriented in a (111) plane, and a (100) plane which is not parallel to a surface of the substrate is present on a surface of the thin film. In this metal thin film, the metal with a face-centered cubic crystal structure includes at least one element selected from the group consisting of Pt, Ir, and Ru.

REFERENCES:
patent: 6025205 (2000-02-01), Park et al.
patent: A-1306387 (2001-08-01), None
patent: 0 855 738 (1998-07-01), None
patent: 1 160 870 (2001-12-01), None
patent: A 2002-208679 (2002-07-01), None
patent: A-2003-218227 (2003-07-01), None
M. Vellaikal et al., “Microstructural Characterization of Platinum Films Grown by MOCVD”, Mat. Res. Soc. Symp. Proc., vol. 403, (1996) pp. 27-32.
H. N. Al-Shareef et al., “Electrodes for Ferroelectric Thin Films”, Integrated Ferroelectrics, vol. 3, (1993) pp. 321-332.
Oh, “Conditions of Heat Treatment and Deposition and Magnetic Characteristics of Co-Pt Thin Film for Magnetic Recording,” Master's Dissertation, Korea Advanced Institute of Science and Technology, Dec. 23, 1998.
Jung, “Pt Hillock Formation Mechanism of Pt/Ti Electrode for Ferroelectric Random Access Memory (FRAM),” Master's Dissertation, Korea Advanced Institute of Science and Technology, 2002.

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