Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-17
2000-04-25
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257611, 257769, H01L 2976
Patent
active
060547448
ABSTRACT:
A method of controlling stresses in thin films that are deposited over semiconductor device substrates. During anneal process steps, grain growth of the film creates stresses in that can damage or destroy it. The stresses lead to warping and bowing and ultimately to film cracking which undermines desired low resistivity. The present invention imparts thermal stability to thin films by grain boundary stuffing (GBS) of preselected elements that resist film grain changes that cause the stresses. GBS implants the elements into the thin film at desired depths, but above the film-substrate interface, sufficient to prevent or lessen destructive grain growth. GBS provides for structural film stability required during severe thermal cycles that occur during subsequent processing of semiconductor devices.
REFERENCES:
patent: 4788160 (1988-11-01), Havemann et al.
patent: 4912542 (1990-03-01), Suguro
patent: 5210043 (1993-05-01), Hosaka
patent: 5393687 (1995-02-01), Liang
patent: 5395797 (1995-03-01), Lee et al.
patent: 5468974 (1995-11-01), Aronowitz et al.
patent: 5541131 (1996-07-01), Yoo et al.
patent: 5624869 (1997-04-01), Agnello et al.
patent: 5633200 (1997-05-01), Hu
patent: 5656546 (1997-08-01), Chen et al.
patent: 5665646 (1997-09-01), Kitano
patent: 5739064 (1998-04-01), Hu et al.
patent: 5856698 (1999-01-01), Hu et al.
patent: 5874351 (1999-02-01), Hu et al.
"Crystallization of Amorphous Ti-Si Alloy Thin Film Microstructure and Resistivity," J. Apl. Phys., vol. 65, No. 10 (1989) by I.J.M.M. Raaijmakers et al., pp. 3896-3906.
"Titanium Silicides and Their Technological Applications," by L.A. Clevenger and R.W. Mann, Mat. Res. Soc. Symp. Proc., vol. 320, pp. 15-25, (1989).
Hu Yong-Jun
Pan Pai Hung
Micro)n Technology, Inc.
Prenty Mark V.
LandOfFree
Metal silicide film stress control by grain boundary stuffing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Metal silicide film stress control by grain boundary stuffing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Metal silicide film stress control by grain boundary stuffing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-995286