Electrical resistors – Resistance value responsive to a condition – Ambient temperature
Patent
1980-09-10
1983-01-25
Albritton, C. L.
Electrical resistors
Resistance value responsive to a condition
Ambient temperature
338308, H01C 704
Patent
active
043706401
ABSTRACT:
A metal-semiconductor variable resistance temperature or infrared energy measuring device is described, along with a method for making it. The device may be made as a thin film, and typically operates over the range of at least 1 degree K to 300 degrees K. The device typically has an approximately 1/T temperature dependence of resistance. In one embodiment, gold is used as the metal, and germanium the semiconductor. The metal subsists as metallic or intermetallic globules dispersed in a semiconductor matrix, and may be formed by heating a metastable metal-semiconductor alloy until the metal precipitates out as described.
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R. P. Anantatmula, et al., "Comments On Microstructure of Dissociated Gold-Silocon Alloy by Sputter Etching and Scanning Electron Microscopy," Materials Science and Eng., vol. 20, pp. 97-98, 1975.
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B. Stryker, et al. "Super Conductivity of Amorphous Germanium Alloy Films," 12th International Conference on Low Temperature Physics, Kyoto, Japan, pp. 339-340, 1970.
N. Kisimoto, et al., "Metal-Nonmetal Trousiton In Amorphous Si-Au System at Low Temp's: Measurements of Electricl Cond., and Thermoelectric Power", Journal of the Physical Socity of Japan, vol. 46, pp. 846-854, 1979.
Dynes Robert C.
Mochel John M.
Albritton C. L.
Bell Telephone Laboratories Incorporated
Fox James H.
Wilde Peter V. D.
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