Metal-semiconductor junction fet

Details Metal-semiconductor junction fet Metal-semiconductor junction fet

1997-06-16

2000-07-04

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257281, 257284, 257412, H01L 2980, H01L 31112, H01L 2976

Patent

active

06084258&

ABSTRACT:
A MESFET has a metallic laminate including WSi.sub.x, Ti, Pt and Au films and implementing gate, source and drain electrodes of the MESFET and interconnects therefor. The substrate of the MESFET is formed of a substrate body, a first semiconductor layer made of n.sup.+ -GaAs doped with Si at a concentration of 2.times.10.sup.18 atoms/cm.sup.3 and a second semiconductor layer made of n.sup.+ -InGaAs doped with Si at a concentration of 1.times.10.sup.19 atoms/cm.sup.3. The source and drain electrodes contact the second semiconductor layer in an ohmic contact while the gate electrode contacts the first semiconductor layer in a Schottky contact through a hole formed in the second semiconductor layer. A reduced number of steps in manufacture of the MESFET can be obtained, thereby reducing fabrication costs of the MESFET.

REFERENCES:
patent: 5272372 (1993-12-01), Kuzuhara et al.
patent: 5285087 (1994-02-01), Narita et al.
patent: 5317190 (1994-05-01), Fleischman et al.
patent: 5391899 (1995-02-01), Kohno

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