Metal-semiconductor field effect transistors (MESFETs)...

Details Metal-semiconductor field effect transistors (MESFETs)... Metal-semiconductor field effect transistors (MESFETs)...

2004-10-29

2008-03-25

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21388, C438S286000

Reexamination Certificate

active

07348612

ABSTRACT:
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a MESFET having a source region, a drain region and a gate contact. The gate contact is disposed between the source region and the drain region. The drain region is electrically coupled to the substrate through a contact via hole to the substrate. Related methods of fabricating MESFETs are also provided herein.

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