Metal/semiconductor deposition

Details Metal/semiconductor deposition Metal/semiconductor deposition

1984-11-16

1986-02-04

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156668, 204192C, 427 88, 430312, 430314, 430315, B44C 122, C03C 1500, C03C 2506, B29C 1708

Patent

active

045684111

ABSTRACT:
Metal is deposited by bias sputtering over a two-layer photoresist mask, the lower layer having a thickness at least 1.5 times the metal thickness and the second layer having an edge overhang in excess of 0.1 .mu.m, and unwanted metal removed by lift-off.

REFERENCES:
"The Size Effect of Lift-Off Metallization of Sputtered Aluminum Films", IEEE Transactions on Electron Devices, vol. Ed-29, (1982), May, No. 5, New York, USA.

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