Metal-semiconductor contact formed using nitrogen plasma

Details Metal-semiconductor contact formed using nitrogen plasma Metal-semiconductor contact formed using nitrogen plasma

1996-09-18

1999-06-15

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257768, 257763, 257764, H01L 2348, H01L 2352

Patent

active

059125080

ABSTRACT:
A low-resistance metal-semiconductor contact for use in integrated circuits includes a titanium silicide layer overlaying a semiconductor body. The top surface of the titanium silicide layer is a combination of silicides and titanium nitride formed by exposing the top surface to a nitrogen plasma. This combination surface is covered by a layer of titanium nitride, which is in turn covered by a layer of conductive metal, such as tungsten.

REFERENCES:
patent: 4851369 (1989-07-01), Ellwanger et al.
patent: 4994410 (1991-02-01), Sun et al.
patent: 5049975 (1991-09-01), Ajika et al.
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5317187 (1994-05-01), Hindman et al.
patent: 5585673 (1996-12-01), Joshi et al.

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