Metal programmable self-timed memories

Details Metal programmable self-timed memories Metal programmable self-timed memories

2008-07-15

2008-07-15

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S200000, C365S201000, C365S205000

Reexamination Certificate

active

10706110

ABSTRACT:
A self-timed memory array is disclosed, in which segmentability and metal-programmability are supported while minimizing layout space. Self-timing row decoder circuits are placed at the top and bottom of the array adjacent to respective I/O blocks. A self-timing signal is routed from the top (resp. bottom) of the array to a point halfway down (resp. up) the memory array and then back to a self-timing row decoder at the top (resp. bottom) of the array. The same approach may also be used to account for the bitline wire delay from the bottom (resp. top) of the array to the sense amplifiers in the I/O block. Further flexibility in wire routing is provided by eliminating metal routing layers from unneeded memory cells, and a programmable gate array may be used to allow an arbitrary word size to be chosen for the memory.

REFERENCES:
patent: 6542434 (2003-04-01), Monzel
patent: 6674661 (2004-01-01), Becker
patent: 6870777 (2005-03-01), Maki
patent: 6876587 (2005-04-01), Ashizawa et al.

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