Metal precursors for deposition of metal-containing films

Details Metal precursors for deposition of metal-containing films Metal precursors for deposition of metal-containing films

2010-01-26

2011-12-13

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21295

Reexamination Certificate

active

08076243

ABSTRACT:
Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

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patent: WO 2007 019435 (2007-02-01), None
Park, K-H et al. “Remarkably Volatile Copper(II) Complexes ofN,N'-Unsymmetrically Substitutes 1,3-Diketimines as Precursors for Cu Metal Deposition via CVD or ALD”, J. Am. Chem. Soc. 2005 127.
Park, K-H et al. “Nonfluorinated Volatile Copper(I) 1,3-Diketiminates as Precursors for Cu Metal Deposition via Atomic Layer Deposition”, Inorganic Chem. 2006 45(21) pp. 8480-8482.

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