Metal precursors for deposition of metal-containing films

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21295

Reexamination Certificate

active

08076243

ABSTRACT:
Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

REFERENCES:
patent: 6939578 (2005-09-01), Bradley et al.
patent: 7268365 (2007-09-01), Bradley et al.
patent: 2006/0292873 (2006-12-01), Millward et al.
patent: 2008/0119098 (2008-05-01), Palley et al.
patent: WO 2007 019435 (2007-02-01), None
Park, K-H et al. “Remarkably Volatile Copper(II) Complexes ofN,N'-Unsymmetrically Substitutes 1,3-Diketimines as Precursors for Cu Metal Deposition via CVD or ALD”, J. Am. Chem. Soc. 2005 127.
Park, K-H et al. “Nonfluorinated Volatile Copper(I) 1,3-Diketiminates as Precursors for Cu Metal Deposition via Atomic Layer Deposition”, Inorganic Chem. 2006 45(21) pp. 8480-8482.

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