Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...
Reexamination Certificate
2008-03-26
2011-12-27
Norton, Nadine G (Department: 1713)
Etching a substrate: processes
Nongaseous phase etching of substrate
Using film of etchant between a stationary surface and a...
C252S079100, C252S079200, C252S079300, C252S079400, C438S689000, C438S690000, C438S691000, C438S692000
Reexamination Certificate
active
08083964
ABSTRACT:
A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant,wherein, in the formula (I), R1represents an alkyl group having 1 to 4 carbon atoms and R2represents an alkylene group having 1 to 4 carbon atoms.
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Inaba Tadashi
Kikuchi Makoto
Matsuno Takahiro
Takahashi Kazutaka
Tomiga Takamitsu
Angadi Maki
Fujifilm Corporation
Norton Nadine G
Sughrue & Mion, PLLC
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